FQD2N60C / FQU2N60C fairchild semiconductor Integrateds Circuit

FQD2N60C / FQU2N60C

N-Channel QFET® MOSFET

600 V, 1.9 A, 4.7 Ω

FAIRCHILD SEMICONDUCTOR

Features

ï 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,

ID = 0.95 A

ï Low Gate Charge (Typ. 8.5 nC)

ï Low Crss (Typ. 4.3 pF)

ï 100% Avalanche Tested

ï RoHS Compliant

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

Product Highlights:

1.9A, 600V, RDS(on) = 4.7W @VGS = 10 V

Low gate charge (typical 8.5 nC)

Low Crss (typical 4.3 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

package: d-pak

Factory Pack Quantity: 2500